Optimization of chemically sprayed ZnS films by Mn doping

Abstract

In this study, undoped and Mn doped ZnS films were grown on microscope glass substrates at substrate tem- perature of 400 ± 5 ◦C by using a low cost Ultrasonic Spray Pyrolysis technique, and the effect of Mn doping on some physical properties of ZnS films was investigated. Structural, optical, electrical and morphological prop- erties of all films were analyzed using X-ray diffractometer (XRD), UV–Vis spectrophotometer, two-probe technique and atomic force microscope (AFM), respectively. X-ray diffraction studies showed that all films were formed in ZnS hexagonal structure and the crystallization levels of the films were relatively improved due to the increase in the Mn doping ratio, especially for 4% doped films. It was determined that the average transmittance value of undoped ZnS film in the visible region is 38% and this value increases to 60% for the sample doped by Mn at the highest rate (12%). The band gap values of the films were calculated using the Tauc equation and determined to be between 3.82 and 3.94 eV. Electrical resistivity values of the films decreased significantly due to the Mn doping. Mn doping also caused ZnS films to have uniform surface morphologies consisting of noticeable particle formations. Figure of merit calculations showed that Mn doping has a favorable effect on ZnS films and ZnS:Mn (12%) films may be promising materials for applications such as photovoltaic solar cells and optoelectronic devices.